Amkor Technology has been granted a patent for a thin semiconductor device with improved edge protection. The device includes a substrate with a conductive edge structure comprising upper and lower conductive layers. This innovation enhances the durability and reliability of semiconductor devices during manufacturing and use. GlobalData’s report on Amkor Technology gives a 360-degree view of the company including its patenting strategy. Buy the report here.
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According to GlobalData’s company profile on Amkor Technology, Under-screen biometric identification was a key innovation area identified from patents. Amkor Technology's grant share as of February 2024 was 79%. Grant share is based on the ratio of number of grants to total number of patents.
Thin semiconductor device with enhanced edge protection
A recently granted patent (Publication Number: US11923280B2) discloses a semiconductor device comprising a substrate with a conductive edge structure and a semiconductor die coupled to the substrate top side. The conductive edge structure includes upper and lower conductive layers, with the upper layer extending outwardly beyond the lower layer. The substrate also features a conductive pattern at the top side, with the semiconductor die connected to this pattern. Additionally, the device includes an encapsulant covering a portion of the die perimeter side and the substrate top side. The upper and lower conductive layers are made of the same metal, and the conductive edge structure is wider at the substrate top side than at the bottom side.
Furthermore, the patent describes a method for manufacturing the semiconductor device, involving providing a substrate with the conductive edge structure and coupling a semiconductor die to the substrate top side. The upper conductive layer of the edge structure provides a portion of the substrate top side, while the lower conductive layer contributes to the substrate bottom side. The method also includes using dielectric material to cover the lower conductive layer's outermost side. The device's design allows for conductive interconnection structures along the bottom side of the semiconductor die, facilitating electrical coupling between the die and the substrate via the top side. The patent emphasizes the unique configuration of the conductive edge structure, with the bottom layer's outermost edge positioned inward of the top layer's outermost edge, and the top layer being wider than the bottom layer.
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GlobalData Patent Analytics tracks bibliographic data, legal events data, point in time patent ownerships, and backward and forward citations from global patenting offices. Textual analysis and official patent classifications are used to group patents into key thematic areas and link them to specific companies across the world’s largest industries.
